SLUSFF6 April 2025 LMG1020-Q1
PRODUCTION DATA
- 1
- 1 Features
- 2 Applications
- 3 Description
- 4 Pin Configuration and Functions
- 5 Specifications
- 6 Detailed Description
- 7 Application and Implementation
- 8 Device and Documentation Support
- 9 Revision History
- 10Mechanical, Packaging, and Orderable Information
封裝選項
請參考 PDF 數(shù)據(jù)表獲取器件具體的封裝圖。
機械數(shù)據(jù) (封裝 | 引腳)
- YBV|6
散熱焊盤機械數(shù)據(jù) (封裝 | 引腳)
訂購信息
7.2 Typical Application
The LMG1020-Q1 is designed to be used with a single low-side, ground-referenced GaN or logic-level Si FET, as shown in Figure 7-1. Independent gate drive resistors, R1 and R2, are used to independently control the turnon and turnoff drive strengths, respectively. For fast and strong turnoff, R2 can be shorted and OUTL directly connected to the transistor’s gate. For symmetric drive strengths, it is acceptable to short OUTH and OUTL and use a single gate-drive resistor.
TI recommends using at least a 2Ω resistor at each OUTH and OUTL to avoid voltage overstress due to inductive ringing. Ringing overshoot must not exceed the maximum absolute supply voltage.
For applications requiring smaller resistance values, contact TI E2E for guidance.
Figure 7-1 Typical Implementation of a Circuit