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LMG1020-Q1

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具有 5V UVLO、可提供納秒級(jí)輸入脈沖的汽車級(jí) 7A 和 5A 單通道柵極驅(qū)動(dòng)器

產(chǎn)品詳情

Number of channels 1 Power switch GaNFET, MOSFET Peak output current (A) 7 Input supply voltage (min) (V) 4.75 Input supply voltage (max) (V) 5.25 Features low-side, ultra-fast Operating temperature range (°C) -40 to 125 Rise time (ns) 0.4 Fall time (ns) 0.4 Propagation delay time (μs) 0.0025 Input threshold TTL Channel input logic Inverting, Non-inverting Input negative voltage (V) 0 Rating Automotive Undervoltage lockout (typ) (V) 3.5 Driver configuration Low Side
Number of channels 1 Power switch GaNFET, MOSFET Peak output current (A) 7 Input supply voltage (min) (V) 4.75 Input supply voltage (max) (V) 5.25 Features low-side, ultra-fast Operating temperature range (°C) -40 to 125 Rise time (ns) 0.4 Fall time (ns) 0.4 Propagation delay time (μs) 0.0025 Input threshold TTL Channel input logic Inverting, Non-inverting Input negative voltage (V) 0 Rating Automotive Undervoltage lockout (typ) (V) 3.5 Driver configuration Low Side
DSBGA (YBV) 6 1.1049 mm2 0.87 x 1.27
  • Qualified for automotive applications
  • AEC-Q100 qualified
    • Device temperature grade 1
  • Low-side, ultra-fast gate driver for GaN and silicon FETs
  • 1ns minimum input pulse width
  • Up to 60MHz operation
  • 2.5ns typical, 4.5ns maximum propagation delay
  • 400ps typical rise and fall time
  • 7A peak source and 5A peak sink currents
  • 5V supply voltage
  • UVLO and overtemperature protection
  • 0.8mm × 1.2mm WCSP package
  • Qualified for automotive applications
  • AEC-Q100 qualified
    • Device temperature grade 1
  • Low-side, ultra-fast gate driver for GaN and silicon FETs
  • 1ns minimum input pulse width
  • Up to 60MHz operation
  • 2.5ns typical, 4.5ns maximum propagation delay
  • 400ps typical rise and fall time
  • 7A peak source and 5A peak sink currents
  • 5V supply voltage
  • UVLO and overtemperature protection
  • 0.8mm × 1.2mm WCSP package

The LMG1020-Q1 device is a single, low-side driver designed for driving GaN FETs and logic-level MOSFETs in high-speed applications including LiDAR, time-of-flight, facial recognition, and any power converters involving low-side. The design simplicity of the LMG1020-Q1 enables extremely fast propagation delays of 2.5 ns and minimum pulse width of 1ns. The drive strength is independently adjustable for the pull-up and pull-down edges by connecting external resistors between the gate and OUTH and OUTL, respectively.

The driver features undervoltage lockout (UVLO) and overtemperature protection (OTP) in the event of overload or fault conditions.

The 0.8mm × 1.2mm WCSP package of the LMG1020-Q1 minimizes gate loop inductance and maximizes power density in high-frequency applications.

The LMG1020-Q1 device is a single, low-side driver designed for driving GaN FETs and logic-level MOSFETs in high-speed applications including LiDAR, time-of-flight, facial recognition, and any power converters involving low-side. The design simplicity of the LMG1020-Q1 enables extremely fast propagation delays of 2.5 ns and minimum pulse width of 1ns. The drive strength is independently adjustable for the pull-up and pull-down edges by connecting external resistors between the gate and OUTH and OUTL, respectively.

The driver features undervoltage lockout (UVLO) and overtemperature protection (OTP) in the event of overload or fault conditions.

The 0.8mm × 1.2mm WCSP package of the LMG1020-Q1 minimizes gate loop inductance and maximizes power density in high-frequency applications.
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* 數(shù)據(jù)表 LMG1020-Q1 5V, 7A, 5A Low-Side GaN and MOSFET Driver For 1ns Pulse Width Automotive Applications 數(shù)據(jù)表 PDF | HTML 2025年 4月 29日

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LMG1020EVM-006 — LMG1020 GaN 低側(cè)驅(qū)動(dòng)器和 GaN FET 激光雷達(dá)評(píng)估模塊

LMG1020EVM-006 是小型易用功率級(jí)，適用于激光雷達(dá)激光驅(qū)動(dòng)。EVM 包括集成電阻負(fù)載（不包括激光）并接受短脈沖輸入，可以進(jìn)行緩沖（并進(jìn)一步縮短）或直接傳遞到功率級(jí)。該板可展示適用于高分辨率激光雷達(dá)和 ToF 系統(tǒng)的納秒級(jí)激光脈沖。
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