4 Revision History
Changes from Revision A (November 2021) to Revision B (April 2023)
- 將 DBV 封裝（SOT-23，5）從預(yù)發(fā)布更改為量產(chǎn)數(shù)據(jù)（正在供貨）并添加了相關(guān)內(nèi)容Go
- 將器件概要 表中的參數(shù)說(shuō)明從“柵源電壓”更改為“柵源擊穿電壓”，并從“漏源電壓”更改為“漏源擊穿電壓”，以便與電氣特性 保持一致Go
- 將器件概要 表中的“漏源飽和電流”值從 36mA 更改為 35mA，以便與電氣特性 保持一致Go
- Changed VCH and VCL pin type and description in Pin Functions
to reflect optional nature of diode clampsGo
- Changed Figure 6-2, Drain-to-Source Current vs Drain-to-Source
Voltage, to show correct VGS valuesGo
- Changed Figure 8-1, VDS vs IDS
, to show
correct VGS values and improve image resolutionGo
- Added JFE150EVM user's guide and JFE150 Ultra-Low-Noise Pre-Amp
application note to Related Documentation
Go
Changes from Revision * (June 2021) to Revision A (November 2021)
- Changed VGS minimum from –1.1 V to –1.3 V (100 μA), –0.9 V to –1.1 V (2 mA) Go
- Changed Figure 6-3, Drain-to-Source Current vs Drain-to-Source
Voltage, to show correct VGS valuesGo