ZHCSGE7A January 2017 – July 2017 TPS548B22
PRODUCTION DATA.
- 1 特性
- 2 應用
- 3 說明
- 4 修訂歷史記錄
- 5 Pin Configuration and Functions
- 6 Specifications
-
7 Detailed Description
- 7.1 Overview
- 7.2 Functional Block Diagram
- 7.3 Feature Description
- 7.4 Device Functional Modes
- 7.5 Programming
-
8 Applications and Implementation
- 8.1 Application Information
- 8.2
Typical Applications
- 8.2.1 TPS548B22 1.5-V to 18-V Input, 1-V Output, 25-A Converter
- 8.2.2 Design Requirements
- 8.2.3
Design Procedure
- 8.2.3.1 Switching Frequency Selection
- 8.2.3.2 Inductor Selection
- 8.2.3.3 Output Capacitor Selection
- 8.2.3.4 Input Capacitor Selection
- 8.2.3.5 Bootstrap Capacitor Selection
- 8.2.3.6 BP Pin
- 8.2.3.7 R-C Snubber and VIN Pin High-Frequency Bypass
- 8.2.3.8 Optimize Reference Voltage (VSEL)
- 8.2.3.9 MODE Pin Selection
- 8.2.3.10 Overcurrent Limit Design.
- 8.2.4 Application Curves
- 9 Power Supply Recommendations
- 10Layout
- 11器件和文檔支持
- 12機械、封裝和可訂購信息
封裝選項
機械數(shù)據(jù) (封裝 | 引腳)
- RVF|40
散熱焊盤機械數(shù)據(jù) (封裝 | 引腳)
- RVF|40
訂購信息
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)(2)| MIN | MAX | UNIT | |||
|---|---|---|---|---|---|
| Input voltage | PVIN | –0.3 | 25 | V | |
| VDD | –0.3 | 25 | |||
| BOOT | –0.3 | 34 | |||
| BOOT to SW | DC | –0.3 | 7.7 | ||
| < 10 ns | –0.3 | 9.0 | |||
| NU | –0.3 | 6 | |||
| EN_UVLO, VOSNS, MODE, FSEL, ILIM | –0.3 | 7.7 | |||
| RSP, RESV_TRK, VSEL | –0.3 | 3.6 | |||
| RSN | –0.3 | 0.3 | |||
| PGND, AGND, DRGND | –0.3 | 0.3 | |||
| SW | DC | –0.3 | 25 | ||
| < 10 ns | –5 | 27 | |||
| Output voltage | PGOOD, BP | –0.3 | 7.7 | ||
| Junction temperature, TJ | –55 | 150 | °C | ||
| Storage temperature, Tstg | –55 | 150 | °C | ||
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to the network ground terminal unless otherwise noted.
6.2 ESD Ratings
| VALUE | UNIT | |||
|---|---|---|---|---|
| V(ESD) | Electrostatic discharge | Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±2000 | V |
| Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | ±500 | |||
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)| MIN | MAX | UNIT | |||
|---|---|---|---|---|---|
| Input voltage | PVIN with no snubber circuit: SW ringing peak voltage equals 23 V at 25-A output |
1.5 | 14 | V | |
| PVIN with snubber circuit: SW ringing peak voltage equals 23 V at 25-A output |
1.5 | 18 | |||
| VDD | 4.5 | 22 | |||
| BOOT | –0.1 | 24.5 | |||
| BOOT to SW | DC | –0.1 | 6.5 | ||
| < 10 ns | –0.1 | 7 | |||
| NU | –0.1 | 5.5 | |||
| EN_UVLO, VOSNS, MODE, FSEL, ILIM | –0.1 | 5.5 | |||
| RSP, RESV_TRK, VSEL | –0.1 | 3.3 | |||
| RSN | –0.1 | 0.1 | |||
| PGND, AGND, DRGND | –0.1 | 0.1 | |||
| SW | DC | –0.1 | 18 | ||
| < 10 ns | –5 | 27 | |||
| Output voltage | PGOOD, BP | –0.1 | 7 | V | |
| Junction temperature, TJ | –40 | 125 | °C | ||
6.4 Thermal Information
| THERMAL METRIC(1) | TPS548B22 | UNIT | |
|---|---|---|---|
| RVF (QFN) | |||
| 40 PINS | |||
| RθJA | Junction-to-ambient thermal resistance | 28.5 | °C/W |
| RθJC(top) | Junction-to-case (top) thermal resistance | 18.3 | °C/W |
| RθJB | Junction-to-board thermal resistance | 3.6 | °C/W |
| ψJT | Junction-to-top characterization parameter | 0.96 | °C/W |
| ψJB | Junction-to-board characterization parameter | 3.6 | °C/W |
| RθJC(bot) | Junction-to-case (bottom) thermal resistance | 0.6 | °C/W |
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.
6.5 Electrical Characteristics
over operating free-air temperature range, VVDD = 12 V, VEN_UVLO = 5 V (unless otherwise noted)| PARAMETER | TEST CONDITION | MIN | TYP | MAX | UNIT | ||
|---|---|---|---|---|---|---|---|
| MOSFET ON-RESISTANCE (RDS(on)) | |||||||
| RDS(on) | High-side FET | (VBOOT – VSW) = 5 V, ID = 25 A, TJ = 25°C | 4.1 | mΩ | |||
| Low-side FET | VVDD = 5 V, ID = 25 A, TJ = 25°C | 1.9 | mΩ | ||||
| INPUT SUPPLY AND CURRENT | |||||||
| VVDD | VDD supply voltage | Nominal VDD voltage range | 4.5 | 22 | V | ||
| IVDD | VDD bias current | No PVIN, EN_UVLO = High, TA = 25°C, | 2 | mA | |||
| IVDDSTBY | VDD standby current | No PVIN, EN_UVLO = Low, TA = 25°C | 700 | µA | |||
| UNDERVOLTAGE LOCKOUT | |||||||
| VVDD_UVLO | VDD UVLO rising threshold | 4.23 | 4.25 | 4.34 | V | ||
| VVDD_UVLO(HYS) | VDD UVLO hysteresis | 0.2 | V | ||||
| VEN_ON_TH | EN_UVLO on threshold | 1.45 | 1.6 | 1.75 | V | ||
| VEN_HYS | EN_UVLO hysteresis | 270 | 300 | 340 | mV | ||
| IEN_LKG | EN_UVLO input leakage current | VEN_UVLO = 5 V | –1 | 0 | 1 | µA | |
| INTERNAL REFERENCE VOLTAGE, EXTERNAL REFIN, AND TRACKING RANGE | |||||||
| VINTREF | Internal REF voltage | 900.4 | mV | ||||
| VINTREFTOL | Internal REF voltage tolerance | –40°C ≤ TJ ≤ 125°C | –0.5% | 0.5% | |||
| VINTREF | Internal REF voltage range | 0.6 | 1.2 | V | |||
| OUTPUT VOLTAGE | |||||||
| VIOS_LPCMP | Loop comparator input offset voltage(1) | –2.5 | 2.5 | mV | |||
| IRSP | RSP input current | VRSP = 600 mV | –1 | 1 | µA | ||
| IVO(dis) | VO discharge current | VVO = 0.5 V, power conversion disabled | 8 | 12 | mA | ||
| DIFFERENTIAL REMOTE SENSE AMPLIFIER | |||||||
| fUGBW | Unity gain bandwidth(1) | 5 | 7 | MHz | |||
| A0 | Open loop gain(1) | 75 | dB | ||||
| SR | Slew rate(1) | ±4.7 | V/µsec | ||||
| VIRNG | Input range(1) | –0.2 | 1.8 | V | |||
| VOFFSET | Input offset voltage(1) | –3.5 | 3.5 | mV | |||
| INTERNAL BOOT STRAP SWITCH | |||||||
| VF | Forward voltage | VBP-BOOT, IF = 10 mA, TA = 25°C | 0.1 | 0.2 | V | ||
| IBOOT | VBST leakage current | VBOOT = 30 V, VSW = 25 V, TA = 25°C | 0.01 | 1.5 | µA | ||
| MODE, VSEL, FSEL DETECTION | |||||||
| VDETECT_TH | MODE, VSEL, and FSEL detection voltage | VBP = 2.93 V, RHIGH = 100 kΩ |
Open | VBP | V | ||
| RLOW = 187 kΩ | 1.9091 | ||||||
| RLOW = 165 kΩ | 1.8243 | ||||||
| RLOW = 147 kΩ | 1.7438 | ||||||
| RLOW = 133 kΩ | 1.6725 | ||||||
| RLOW = 121 kΩ | 1.6042 | ||||||
| RLOW = 110 kΩ | 1.5348 | ||||||
| RLOW = 100 kΩ | 1.465 | ||||||
| RLOW = 90.9 kΩ | 1.3952 | ||||||
| RLOW = 82.5 kΩ | 1.3245 | ||||||
| RLOW = 75 kΩ | 1.2557 | ||||||
| RLOW = 68.1 kΩ | 1.187 | ||||||
| RLOW = 60.4 kΩ | 1.1033 | ||||||
| RLOW = 53.6 kΩ | 1.0224 | ||||||
| RLOW = 47.5 kΩ | 0.9436 | ||||||
| RLOW = 42.2 kΩ | 0.8695 | ||||||
| RLOW = 37.4 kΩ | 0.7975 | ||||||
| RLOW = 33.2 kΩ | 0.7303 | ||||||
| RLOW = 29.4 kΩ | 0.6657 | ||||||
| RLOW = 25.5 kΩ | 0.5953 | ||||||
| RLOW = 22.1 kΩ | 0.5303 | ||||||
| RLOW = 19.1 kΩ | 0.4699 | ||||||
| RLOW = 16.5 kΩ | 0.415 | ||||||
| RLOW = 14.3 kΩ | 0.3666 | ||||||
| RLOW = 12.1 kΩ | 0.3163 | ||||||
| RLOW = 10 kΩ | 0.2664 | ||||||
| RLOW = 7.87 kΩ | 0.2138 | ||||||
| RLOW = 6.19 kΩ | 0.1708 | ||||||
| RLOW = 4.64 kΩ | 0.1299 | ||||||
| RLOW = 3.16 kΩ | 0.0898 | ||||||
| RLOW = 1.78 kΩ | 0.0512 | ||||||
| RLOW = 0 Ω | GND | ||||||
| PGOOD COMPARATOR | |||||||
| VPGTH | PGOOD threshold | PGOOD in from higher | 105 | 108 | 111 | %VREF | |
| PGOOD in from lower | 89 | 92 | 95 | ||||
| PGOOD out to higher | 120 | ||||||
| PGOOD out to lower | 68 | ||||||
| IPG | PGOOD sink current | VPGOOD = 0.5 V | 6.9 | mA | |||
| IPGLK | PGOOD leakage current | VPGOOD = 5 V | –1 | 0 | 1 | μA | |
| CURRENT DETECTION | |||||||
| VILM | VILIM voltage range | On-resistance (RDS(on)) sensing | 0.1 | 1.2 | V | ||
| IOCL_VA | Valley current limit threshold | RLIM = 61.9 kΩ | 30 | A | |||
| OC tolerance | ±15% | ||||||
| RLIM = 51.1 kΩ | 25 | A | |||||
| OC tolerance | ±15% | ||||||
| RLIM = 40.2 kΩ | 17 | 20 | 23 | A | |||
| IOCL_VA_N | Negative valley current limit threshold | RLIM = 61.9 kΩ | –30 | A | |||
| RLIM = 51.1 kΩ | –25 | ||||||
| RLIM = 40.2 kΩ | –20 | ||||||
| ICLMP_LO | Clamp current at VLIM clamp at lowest | VILIM_CLMP = 0.1 V, TA = 25°C | 5 | A | |||
| ICLMP_HI | Clamp current at VLIM clamp at highest | VILIM_CLMP = 1.2 V, TA = 25°C | 50 | A | |||
| VZC | Zero cross detection offset | 0 | mV | ||||
| PROTECTIONS AND OOB | |||||||
| VBPUVLO | BP UVLO threshold voltage | Wake-up | 3.32 | V | |||
| Shutdown | 3.11 | ||||||
| VOVP | OVP threshold voltage | OVP detect voltage | 117% | 120% | 123% | VREF | |
| VUVP | UVP threshold voltage | UVP detect voltage | 65% | 68% | 71% | VREF | |
| VOOB | OOB threshold voltage | 8% | VREF | ||||
| BP VOLTAGE | |||||||
| VBP | BP LDO output voltage | VIN = 12 V, 0 A ≤ ILOAD ≤ 10 mA, | 5.07 | V | |||
| VBPDO | BP LDO drop-out voltage | VIN = 4.5 V, ILOAD = 30 mA, TA = 25°C | 365 | mV | |||
| IBPMAX | BP LDO over-current limit | VIN = 12 V, TA = 25°C | 100 | mA | |||
| THERMAL SHUTDOWN | |||||||
| TSDN | Built-In thermal shutdown threshold(1) | Shutdown temperature | 155 | 165 | °C | ||
| Hysteresis | 30 | ||||||
(1) Specified by design. Not production tested.
6.6 Timing Requirements
| MIN | NOM | MAX | UNIT | ||||
|---|---|---|---|---|---|---|---|
| SWITCHING FREQUENCY | |||||||
| fSW | VO switching frequency(1) | VIN = 12 V, VVO = 1 V, TA = 25°C | 380 | 425 | 475 | kHz | |
| 585 | 650 | 740 | |||||
| 790 | 875 | 995 | |||||
| 950 | 1050 | 1250 | |||||
| tON(min) | Minimum on time(2) | 60 | ns | ||||
| tOFF(min) | Minimum off time(2) | DRVH falling to rising | 300 | ns | |||
| SOFT-START | |||||||
| tSS | Soft-start time | VOUT rising from 0 V to 95% of final set point, RMODE_HIGH = 100 kΩ | RMODE_LOW = 60.4 kΩ | 7 | 8(3) | 10 | ms |
| RMODE_LOW = 53.6 kΩ | 3.6 | 4(4) | 5.2 | ms | |||
| RMODE_LOW = 47.5 kΩ | 1.6 | 2 | 2.8 | ms | |||
| RMODE_LOW = 42.2 kΩ | 0.8 | 1 | 1.6 | ms | |||
| PGOOD COMPARATOR | |||||||
| tPGDLY | PGOOD delay time | Delay for PGOOD going in | 1 | ms | |||
| Delay for PGOOD coming out | 2 | µs | |||||
| POWER-ON DELAY | |||||||
| tPODLY | Power-on delay time | 1.024 | ms | ||||
| PROTECTIONS AND OOB | |||||||
| tOVPDLY | OVP response time | 100-mV over drive | 1 | µs | |||
| tUVPDLY | UVP delay filter delay time | 1 | ms | ||||
| tHICDLY | Hiccup blanking time | tSS = 1 ms | 16 | ms | |||
| tSS = 2 ms | 24 | ms | |||||
| tSS = 4 ms | 38 | ms | |||||
| tSS = 8 ms | 67 | ms | |||||
(1) Correlated with closed-loop EVM measurement at load current of 20 A.
(2) Specified by design. Not production tested.
(3) In order to use the 8-ms SS setting, follow the steps outlined in Application Workaround to Support 4-ms and 8-ms SS Settings.
(4) In order to use the 4-ms SS setting, follow the steps outlined in Application Workaround to Support 4-ms and 8-ms SS Settings.
6.7 Typical Characteristics
| VOUT = 1 V | VDD = VIN | SKIP Mode |
| fSW = 650 kHz |
| VOUT = 1 V | VDD = VIN | SKIP Mode |
| fSW = 650 kHz |
| VDD = VIN | fSW = 650 kHz | SKIP Mode |
| VOUT = 2.5 V | L= 820 nH, 0.9 mΩ |
| VOUT = 1 V | VDD = VIN | FCCM Mode |
| fSW = 650 kHz |
| VOUT = 1 V | VDD = VIN | FCCM Mode |
| fSW = 650 kHz |
| VDD = VIN | fSW = 650 kHz | SKIP Mode |
| VOUT = 2.5 V | L= 820 nH, 0.9 mΩ |
| VDD = VIN | fSW = 650 kHz | FCCM Mode |
| VOUT = 5 V | L= 820 nH, 0.9 mΩ |
| VDD = VIN = 12 V | fSW = 650 kHz | IOUT = 25 A |
| VOUT = 1 V | Natural convection at room temperature | |
| VDD = VIN = 12 V | fSW = 650 kHz | IOUT = 25 A |
| VOUT = 2.5 V | Natural convection at room temperature | |
| VDD = VIN | fSW = 650 kHz | FCCM Mode |
| VOUT = 5 V | L= 820 nH, 0.9 mΩ | |
| VDD = VIN = 18 V | fSW = 650 kHz | IOUT = 25 A |
| VOUT = 1 V | Natural convection at room temperature | |
| VDD = VIN = 12 V | fSW = 650 kHz | IOUT = 25 A |
| VOUT = 5 V | Natural convection at room temperature | |