ZHCSRZ2B April 2023 – December 2025 ESD451
PRODUCTION DATA
請(qǐng)參考 PDF 數(shù)據(jù)表獲取器件具體的封裝圖。
| 參數(shù) | 封裝 | 測(cè)試條件 | 最小值 | 典型值 | 最大值 | 單位 | |
|---|---|---|---|---|---|---|---|
| VRWM | 反向關(guān)斷電壓 | DPL 和 DPY 封裝 | IIO < 100nA，在工作溫度范圍內(nèi) | -5.5 | 5.5 | V | |
| ILEAK | 反向漏電流 | VIO = 5.5V，IO 至 GND 或 GND 至 IO | 5 | 50 | nA | ||
| VBR | 擊穿電壓 | IIO = 1mA，IO 至 GND | 7 | 8 | 9 | V | |
| VCLAMP | 使用 TLP 時(shí)的鉗位電壓 | DPL 封裝 | IPP = 1A，TLP，IO 至 GND | 7.6 | V | ||
| IPP = 5A，TLP，IO 至 GND | 8.2 | ||||||
| IPP = 16A，TLP，IO 至 GND | 10.4 | ||||||
| IPP = 1A，TLP，GND 至 IO | 7.6 | ||||||
| IPP = 5A，TLP，GND 至 IO | 8.2 | ||||||
| IPP = 16A，TLP，GND 至 IO | 10.4 | ||||||
| 浪涌沖擊的鉗位電壓 (3) | IPP = 6A，tp = 8/20μs，IO 至 GND | 9.5 | |||||
| IPP = 6A，tp = 8/20μs，GND 至 IO | 9.5 | ||||||
| RDYN | 動(dòng)態(tài)電阻 (2) | IO 至 GND | 0.19 | Ω | |||
| GND 至 IO | 0.19 | ||||||
| VCLAMP | 使用 TLP 時(shí)的鉗位電壓 | DPY 封裝 | IPP = 1A，TLP，IO 至 GND | 8.2 | V | ||
| IPP = 5A，TLP，IO 至 GND | 9.2 | ||||||
| IPP = 16A，TLP，IO 至 GND | 11.5 | ||||||
| IPP = 1A，TLP，GND 至 IO | 8.2 | ||||||
| IPP = 5A，TLP，GND 至 IO | 9.2 | ||||||
| IPP = 16A，TLP，GND 至 IO | 11.5 | ||||||
| 浪涌沖擊的鉗位電壓 (3) | IPP = 6A，tp = 8/20μs，IO 至 GND | 10 | |||||
| IPP = 6A，tp = 8/20μs，GND 至 IO | 10 | ||||||
| RDYN | 動(dòng)態(tài)電阻 (2) | IO 至 GND | 0.24 | Ω | |||
| GND 至 IO | 0.24 | ||||||
| CL | 線路電容 | DPL 和 DPY 封裝 | VIO = 0V；? = 1MHz，Vpp = 30mV，IO 至 GND 或 IO 至 GND | 0.5 | pF | ||