DRV8210P

正在供貨

具有 PWM 控制和低功耗睡眠模式的 12V、1A H 橋電機(jī)驅(qū)動(dòng)器

產(chǎn)品詳情

Number of full bridges 1 Vs (min) (V) 1.65 Vs ABS (max) (V) 12 Peak output current (A) 1.76 RDS(ON) (HS + LS) (mΩ) 1050 Sleep current (μA) 0.0035 Control mode PWM Control interface Hardware (GPIO) Topology Integrated FET Rating Catalog Operating temperature range (°C) -40 to 125
Number of full bridges 1 Vs (min) (V) 1.65 Vs ABS (max) (V) 12 Peak output current (A) 1.76 RDS(ON) (HS + LS) (mΩ) 1050 Sleep current (μA) 0.0035 Control mode PWM Control interface Hardware (GPIO) Topology Integrated FET Rating Catalog Operating temperature range (°C) -40 to 125
WSON (DSG) 8 4 mm2 2 x 2
  • N-channel H-bridge motor driver
    • MOSFET on-resistance: HS + LS 1 Ω
    • Drives one bidirectional brushed DC motor
    • One single- or dual-coil latching relay
  • 1.65-V to 11-V operating supply voltage range
  • High output current capability: 1.76-A peak

  • Standard PWM Interface (IN1/IN2)

  • Supports 1.8-V, 3.3-V, and 5-V logic inputs
  • Ultra low-power sleep mode
    • <84.5 nA @ VVM = 5 V, VVCC = 3.3 V, TJ = 25°C
    • Pin-to-pin with DRV8837 & DRV8837C
  • Protection features
    • Undervoltage lockout (UVLO)
    • Overcurrent protection (OCP)
    • Thermal shutdown (TSD)
  • Family of devices. See Section 5 for details.
    • DRV8210: 1.65-11 V, 1 Ω, multiple interfaces
    • DRV8210P: Sleep pin, PWM interface
    • DRV8212: 1.65-11 V, 280 mΩ, multiple interfaces
    • DRV8212P: Sleep pin, PWM interface
    • DRV8220: 4.5-18 V, 1 Ω, multiple interfaces
  • N-channel H-bridge motor driver
    • MOSFET on-resistance: HS + LS 1 Ω
    • Drives one bidirectional brushed DC motor
    • One single- or dual-coil latching relay
  • 1.65-V to 11-V operating supply voltage range
  • High output current capability: 1.76-A peak

  • Standard PWM Interface (IN1/IN2)

  • Supports 1.8-V, 3.3-V, and 5-V logic inputs
  • Ultra low-power sleep mode
    • <84.5 nA @ VVM = 5 V, VVCC = 3.3 V, TJ = 25°C
    • Pin-to-pin with DRV8837 & DRV8837C
  • Protection features
    • Undervoltage lockout (UVLO)
    • Overcurrent protection (OCP)
    • Thermal shutdown (TSD)
  • Family of devices. See Section 5 for details.
    • DRV8210: 1.65-11 V, 1 Ω, multiple interfaces
    • DRV8210P: Sleep pin, PWM interface
    • DRV8212: 1.65-11 V, 280 mΩ, multiple interfaces
    • DRV8212P: Sleep pin, PWM interface
    • DRV8220: 4.5-18 V, 1 Ω, multiple interfaces

The DRV8210P is an integrated motor driver with four N-channel power FETs, charge pump regulator, and protection circuitry. The tripler charge pump architecture allows the device to operate down to 1.65 V to accommodate 1.8-V supply rails and low-battery conditions. The charge pump integrates all capacitors to reduce the overall solution size of the motor driver on a PCB and allows for 100% duty cycle operation.

The DRV8210P supports an industry standard PWM (IN1/IN2) control interface. The nSLEEP pin controls a low-power sleep mode which achieves ultra-low quiescent current draw by disabling the internal circuitry.

The device can supply up to 1.76-A peak output current. It operates with a supply voltage from 1.65 V to 5.5 V.

The driver offers robust internal protection features include supply undervoltage lockout (UVLO), output overcurrent (OCP), and device overtemperature (TSD).

The DRV8210P is part of a family of devices which come in pin-to-pin scalable RDS(on) and supply voltage options to support various loads and supply rails with minimal design changes. See Section 5 for information on the devices in this family. View our full portfolio of brushed motor drivers on ti.com.

The DRV8210P is an integrated motor driver with four N-channel power FETs, charge pump regulator, and protection circuitry. The tripler charge pump architecture allows the device to operate down to 1.65 V to accommodate 1.8-V supply rails and low-battery conditions. The charge pump integrates all capacitors to reduce the overall solution size of the motor driver on a PCB and allows for 100% duty cycle operation.

The DRV8210P supports an industry standard PWM (IN1/IN2) control interface. The nSLEEP pin controls a low-power sleep mode which achieves ultra-low quiescent current draw by disabling the internal circuitry.

The device can supply up to 1.76-A peak output current. It operates with a supply voltage from 1.65 V to 5.5 V.

The driver offers robust internal protection features include supply undervoltage lockout (UVLO), output overcurrent (OCP), and device overtemperature (TSD).

The DRV8210P is part of a family of devices which come in pin-to-pin scalable RDS(on) and supply voltage options to support various loads and supply rails with minimal design changes. See Section 5 for information on the devices in this family. View our full portfolio of brushed motor drivers on ti.com.
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頂層文檔 類型 標(biāo)題 格式選項(xiàng) 下載最新的英語版本 日期
* 數(shù)據(jù)表 DRV8210P 11-V H-Bridge Motor Driver with PWM Interface and Low-Power Sleep Mode 數(shù)據(jù)表 PDF | HTML 2021年 5月 6日
技術(shù)文章 Overcoming design challenges for brushed-DC motors in smart sanitation systems PDF | HTML 2020年 7月 1日
技術(shù)文章 Automating smart home systems with motor drivers PDF | HTML 2019年 10月 24日
應(yīng)用手冊(cè) 所選封裝材料的熱學(xué)和電學(xué)性質(zhì) 2008年 10月 16日

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評(píng)估板

DRV8210EVM — 具有低功耗睡眠模式的 DRV8210 低電壓 H 橋電機(jī)驅(qū)動(dòng)器評(píng)估模塊

DRV8210 評(píng)估模塊 (EVM) 可輕松評(píng)估 DRV8210 器件。

DRV8210 電機(jī)驅(qū)動(dòng)器集成了 N 溝道 H 橋、電荷泵穩(wěn)壓器以及保護(hù)電路。該器件支持 PWM (IN1/IN2)、相位/使能 (PH/EN)、獨(dú)立半橋和并行半橋控制模式。

EVM 配備了電位器，可用于設(shè)置輸入控制引腳（PH/IN1、EN/IN2）的占空比。

用戶指南: PDF
TI.com 上無現(xiàn)貨
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WSON (DSG) 8 Ultra Librarian

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包含信息：
  • RoHS
  • REACH
  • 器件標(biāo)識(shí)
  • 引腳鍍層/焊球材料
  • MSL 等級(jí)/回流焊峰值溫度
  • MTBF/時(shí)基故障估算
  • 材料成分
  • 鑒定摘要
  • 持續(xù)可靠性監(jiān)測(cè)
包含信息：
  • 制造廠地點(diǎn)
  • 封裝廠地點(diǎn)

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